Magnetic Transitions and Magnetoresistance of Y1-xDyxMn6Sn6 ( x = 0.2 and 0.3)
ZHANG Shao-Ying1, YAO Jin-Lei1,2, ZHANG Li-Gang3, LI Yun-Bao3, ZHAO Tong-Yun1, SHEN Bao-Gen1
1State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
3Department of Applied Physics, University of Science and Technology of Wuhan, Wuhan 430081
Magnetic Transitions and Magnetoresistance of Y1-xDyxMn6Sn6 ( x = 0.2 and 0.3)
1State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
3Department of Applied Physics, University of Science and Technology of Wuhan, Wuhan 430081
Abstract： Magnetic transitions and magnetoresistance of HfFe6Ge6-type Y1-xDyxMn6Sn6 ( x = 0.2 and 0.3) have been investigated in the temperature range of 5-380 K. It was found that the strong exchange interaction between the Dy and Mn sublattices results in incomplete ferrimagnetism at low temperatures. At higher temperatures, the metamagnetic transition from an antiferromagnetic state to a ferrimagnetic state can be induced by a fairly small threshold field or by increasing temperature. The magnetic transition is accompanied by a large magnetoresistance effect of about -29% and -16% at 5 K for x = 0.2 and 0.3, respectively.
ZHANG Shao-Ying;YAO Jin-Lei;ZHANG Li-Gang;LI Yun-Bao;ZHAO Tong-Yun;SHEN Bao-Gen. Magnetic Transitions and Magnetoresistance of Y1-xDyxMn6Sn6 ( x = 0.2 and 0.3)[J]. 中国物理快报, 2003, 20(6): 912-914.
ZHANG Shao-Ying, YAO Jin-Lei, ZHANG Li-Gang, LI Yun-Bao, ZHAO Tong-Yun, SHEN Bao-Gen. Magnetic Transitions and Magnetoresistance of Y1-xDyxMn6Sn6 ( x = 0.2 and 0.3). Chin. Phys. Lett., 2003, 20(6): 912-914.
2003, Vol. 20 
