Ellipsometric Evaluation of the sp3-Bonded Carbon Fraction in Carbon Thin Films
MO Dang1, LI Fang1, CHEN Di-Hu1, WEI Ai-Xiang2,3
1State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou 510275
2Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Guangzhou Naval Academy, Guangzhou 510430
Ellipsometric Evaluation of the sp3-Bonded Carbon Fraction in Carbon Thin Films
MO Dang1;LI Fang1;CHEN Di-Hu1;WEI Ai-Xiang2,3
1State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou 510275
2Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Guangzhou Naval Academy, Guangzhou 510430
Abstract： We prepared amorphous carbon films on Si (100) substrates by using a magnetic-field-filtered plasma stream deposition system. Various samples with different sp3-bonded carbon fraction were obtained by changing the bias voltage applied to the substrates. We measured the ellipsometric spectra of various carbon film samples in the photon energy range of 2.0-5.0 eV. We also measured the Raman spectra for comparison. Our results show that the ellipsometric spectra are dependent on the sp3 carbon fraction. We analysed the measured ellipsometric spectra by a simple method, and determined the sp3 carbon fraction semi-quantitatively. The results from the ellipsometry and the Raman spectroscopy show the same tendency of the sp3 carbon fraction as a function of bias voltage. We found that the spectroscopic ellipsometry is a relatively simple, non-destructive method to evaluate the sp3 carbon fraction of the amorphous carbon films.
MO Dang;LI Fang;CHEN Di-Hu;WEI Ai-Xiang;. Ellipsometric Evaluation of the sp3-Bonded Carbon Fraction in Carbon Thin Films[J]. 中国物理快报, 2003, 20(4): 462-464.
MO Dang, LI Fang, CHEN Di-Hu, WEI Ai-Xiang,. Ellipsometric Evaluation of the sp3-Bonded Carbon Fraction in Carbon Thin Films. Chin. Phys. Lett., 2003, 20(4): 462-464.
2003, Vol. 20 
