Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure
RAN Guang-Zhao1,3, SUN Yong-Ke1, CHEN Yuan1, DAI Lun1, CUI Xiao-Ming1, ZHANG Bo-Rui1, QIAO Yong-Ping1, MA Zhen-Chang2, ZONG Wan-Hua2, QIN Guo-Gang1,3
1School of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871
2National Key Laboratory of ASIC, HSRI, Shijiazhuang 050051
3International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015
Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure
1School of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871
2National Key Laboratory of ASIC, HSRI, Shijiazhuang 050051
3International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015
Abstract： Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored purposely by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centers and become some types of nonradiative centers in the Si oxide layer, which thus result in changes of the EL and PL spectra.
2003, Vol. 20 
