Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp
HAN Zheng-Fu1,2, LIAO Yan-Lin4, ZHOU Hong-Jun2, JIANG Zuo-Hong3, ZHANG Guo-Bin2, CAO Zhuo-Liang1,4
1Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026
2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
3Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026
4Department of Physics, Anhui University, Hefei 230039
Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp
HAN Zheng-Fu1,2;LIAO Yan-Lin4;ZHOU Hong-Jun2;JIANG Zuo-Hong3;ZHANG Guo-Bin2;CAO Zhuo-Liang1,4
1Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026
2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
3Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026
4Department of Physics, Anhui University, Hefei 230039
Abstract： A successful direct, etching system excited by a vacuum ultraviolet hollow cathode lamp is reported. The result shows that the facility can transfer a mesh pattern exactly and directly to n-type GaAs wafer, which is the same as that direct etched by synchrotron radiation.
2003, Vol. 20 
