Terahertz Detection with Twin Superconductor--Insulator--Superconductor Tunnel Junctions
LI Jing1, WANG Ming-Jye2, SHI Sheng-Cai1, Hiroshi Matsuo3
1Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008
2Institute of Astronomy and Astrophysics, Academia Sinica, Taipei
3National Astronomical Observatory of Japan, NINS, Japan
Terahertz Detection with Twin Superconductor--Insulator--Superconductor Tunnel Junctions
LI Jing1;WANG Ming-Jye2;SHI Sheng-Cai1;Hiroshi Matsuo3
1Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008
2Institute of Astronomy and Astrophysics, Academia Sinica, Taipei
3National Astronomical Observatory of Japan, NINS, Japan
摘要Terahertz detection with twin superconductor--insulator--superconductor (SIS) tunnel junctions, which are connected in parallel via an inductive thin-film superconducting microstrip line, is mainly studied. Firstly, we investigate the direct-detection response of a superconducting twin-junction device by means of a Fourier transform spectrometer. Secondly, we construct a direct-detection model of twin SIS tunnel junctions. The superconducting twin-junction device is then simulated in terms of the constructed model. The simulation result is found to be in good agreement with the measured one. In addition, we observe that the direct-detection response of the device is consistent with the noise temperature behaviour.
Abstract:Terahertz detection with twin superconductor--insulator--superconductor (SIS) tunnel junctions, which are connected in parallel via an inductive thin-film superconducting microstrip line, is mainly studied. Firstly, we investigate the direct-detection response of a superconducting twin-junction device by means of a Fourier transform spectrometer. Secondly, we construct a direct-detection model of twin SIS tunnel junctions. The superconducting twin-junction device is then simulated in terms of the constructed model. The simulation result is found to be in good agreement with the measured one. In addition, we observe that the direct-detection response of the device is consistent with the noise temperature behaviour.
[1] Zmuidzinas J and Richards P L 2004 Proc. IEEE 92 1597 [2] De Lucia F C 2003 Opt. Photon. News 8 44 [3] Tucker J R 1979 IEEE J. Quantum Electron. 15 1234 [4] Matsuo H, Noguchi T, Sakamoto A, Sato T and Shi S C 1996 Digitof 30th ESLAB Symp.: Submm $\&$ Far-IR Instrumentation ESA (SP-388) 37 [5] Noguchi T, Shi S C and Inatani J 1995 IEICE Trans. Elctron.E 78 481 [6] Chin C C, Wang M J, Shan W L, Zhang W, Cheng H W, Shi S C andNoguchi T 2002 Int. J. IR $\&$ MM Waves 23 731 [7] Zhang W H 1979 J. Appl. Phys. 50 8129 [8] Mattis D C and Bardeen J 1958 Phys. Rev. 111