Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes
ZHANG Wei-Hua1, LI Jia-Ming 1,2
1 Key Laboratory of Atomic and Molecular Nanosciences of Education Ministry, Department of Physics, Tsinghua University, Beijing 1000842Department of Physics, Shanghai Key Laboratory for Laser Fabrication and Material Science, Shanghai Jiaotong University, Shanghai 200030
Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes
ZHANG Wei-Hua1;LI Jia-Ming 1,2
1 Key Laboratory of Atomic and Molecular Nanosciences of Education Ministry, Department of Physics, Tsinghua University, Beijing 1000842Department of Physics, Shanghai Key Laboratory for Laser Fabrication and Material Science, Shanghai Jiaotong University, Shanghai 200030
摘要In the frame work of quantum defect theory, photoabsorption spectra near Si 2p edges of silane have been studied. When silanes are adsorbed on a physical surface and excited by polarized x-ray photons, relative intensities of the spectra will be different from that of free molecules. Such features can be used to determine orientations of adsorbed silanes based on selection rules.
Abstract：In the frame work of quantum defect theory, photoabsorption spectra near Si 2p edges of silane have been studied. When silanes are adsorbed on a physical surface and excited by polarized x-ray photons, relative intensities of the spectra will be different from that of free molecules. Such features can be used to determine orientations of adsorbed silanes based on selection rules.
(Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors)
引用本文:
ZHANG Wei-Hua;LI Jia-Ming;. Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes[J]. 中国物理快报, 2007, 24(3): 687-690.
ZHANG Wei-Hua, LI Jia-Ming,. Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes. Chin. Phys. Lett., 2007, 24(3): 687-690.
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