摘要We report the low threshold current density operation of strain-compensated In 0.64 Ga 0.36 As/In 0.38 Al 0.62 As quantum cascade lasers emitting near 4.94μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm2 at 80K is achieved for an uncoated 20-μm-wide and 2.5-mm-long laser.
Abstract:We report the low threshold current density operation of strain-compensated In 0.64 Ga 0.36 As/In 0.38 Al 0.62 As quantum cascade lasers emitting near 4.94μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm2 at 80K is achieved for an uncoated 20-μm-wide and 2.5-mm-long laser.
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
SHAO Ye;LI Lu;LIU Jun-Qi;LIU Feng-Qi;WANG Zhan-Guo. Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser[J]. 中国物理快报, 2007, 24(3): 717-720.
SHAO Ye, LI Lu, LIU Jun-Qi, LIU Feng-Qi, WANG Zhan-Guo. Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser. Chin. Phys. Lett., 2007, 24(3): 717-720.
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