摘要Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition (MOCVD). By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, hotoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939cm2/Vs, and 3.9×1018cm-3, respectively.
Abstract：Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition (MOCVD). By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, hotoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939cm2/Vs, and 3.9×1018cm-3, respectively.
XIE Zi-Li;ZHANG Rong;XIU Xiang-Qian;LIU Bin;LI Liang;HAN Ping;GU Shu-Lin;SHI Yi;ZHENG You-Dou. Growth and Characterization of InN Thin Films on Sapphire by MOCVD[J]. 中国物理快报, 2007, 24(4): 1004-1006.
XIE Zi-Li, ZHANG Rong, XIU Xiang-Qian, LIU Bin, LI Liang, HAN Ping, GU Shu-Lin, SHI Yi, ZHENG You-Dou. Growth and Characterization of InN Thin Films on Sapphire by MOCVD. Chin. Phys. Lett., 2007, 24(4): 1004-1006.
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