Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022
A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding
Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022
摘要A red-light AlGaInP light emitting diode (LED) is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance (EL) test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current--voltage (I--V) measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V<1.5V). In the large voltage region (V>1.5V), the I--V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.
Abstract：A red-light AlGaInP light emitting diode (LED) is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance (EL) test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current--voltage (I--V) measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V<1.5V). In the large voltage region (V>1.5V), the I--V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.
[1] Zhen H L, Li N, Xiong D Y, Zhou X C, Lu W and Liu H C 2005 Chin. Phys. Lett. 22 1806 [2] Chen M, Guo X, Deng J, Gai H X, Dong L M, Qu H W, Guan B L, Gao Gand Shen G D 2005 Chin. Phys. Lett. 22 3074 [3] HOfler G E, Vanderwater D A, DeFevere D C, Kish F A, Camras M D,Steranka F M and Tan I H 1996 Appl. Phys. Lett. 69 803 [4] Horng R H, Wuu D S, Wei S C and Tseng C Y 1999 Appl. Phys.Lett. 75 3054 [5] Li Z H, Yu T J, Yang Z J, Tong Y Z, Zhang G Y, Feng Y C, Guo B Pand Niu H B 2004 Chin. Phys. Lett. 21 1845 [6] Li Z H, Yang Z J, Qin Z X, Tong Y Z, Yu T J, Lu S, Yang H and ZhangG Y 2003 Chin. Phys. Lett. 20 1350 [7] Estrada S, Xing H L, Andreas S, Andrew H, Umesh M, Steven D B,Larry C and Hu E 2003 Appl. Phys. Lett. 82 820 [8] Rose A 1955 Phys. Rev. 97 1538 [9] Fedison J B, Chow T P, Lu H and Bhat I B 1998 Appl. Phys.Lett. 72 2841 [10] Ya I Alivov, Van Nostrand J E, Look D C, Chukichev M V and Ataev BM 2003 Appl. Phys. Lett. 83 2943 [11] Ye J D, Gu S L, Zhu S M, Liu W, Liu S M, Zhang R, Shi Y and ZhengY D 2006 Appl. Phys. Lett. 88 182112-1 [12] Campbell A J, Donal D C Bradley and David G L 1998 Opt.Mater. 9 114 [13] Jasinski J, Liliental-Weber Z, Estrada S and Hu E 2002 Appl.Phys. Lett. 81 3152 [14] Shen Z, Kortshagen U and Campbell S A 2004 J. Appl. Phys. 96 2204
2007, Vol. 24 
