摘要Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-x As/GaAs very-long-wavelength (>12μm) quantum well infrared photodetectors (VLW-QWIPs) characterized by the photoluminescence (PL) and photocurrent (PC) measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the InxGa1-x As/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa 1-x As well width are presented, which will be helpful for device design and optimization.
Abstract：Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-x As/GaAs very-long-wavelength (>12μm) quantum well infrared photodetectors (VLW-QWIPs) characterized by the photoluminescence (PL) and photocurrent (PC) measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the InxGa1-x As/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa 1-x As well width are presented, which will be helpful for device design and optimization.
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2007, Vol. 24 
