摘要The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.
Abstract：The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.
HU Xin;TANG Shao-Qiang. Transient and Stationary Simulations for a Quantum Hydrodynamic Model[J]. 中国物理快报, 2007, 24(6): 1437-1440.
HU Xin, TANG Shao-Qiang. Transient and Stationary Simulations for a Quantum Hydrodynamic Model. Chin. Phys. Lett., 2007, 24(6): 1437-1440.
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2007, Vol. 24 
