Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator
ZHAO Yi-Hua, DONG Gui-Fang, WANG Li-Duo, QIU Yong
Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084
Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator
ZHAO Yi-Hua;DONG Gui-Fang;WANG Li-Duo;QIU Yong
Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084
摘要We employ the Ta2O5/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta2O5 insulator layers, the device with the Ta2O5/PVP double-layer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54cm2/Vs, and the decreasing threshold voltage from 4.38V to -2.5V. The results suggest that the Ta2O5/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
Abstract：We employ the Ta2O5/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta2O5 insulator layers, the device with the Ta2O5/PVP double-layer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54cm2/Vs, and the decreasing threshold voltage from 4.38V to -2.5V. The results suggest that the Ta2O5/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
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2007, Vol. 24 
