High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region
JI Xiao-Li 1,2, JIANG Ruo-Lian 1,2, XIE Zi-Li 1,2, LIU Bin 1,2, ZHOU Jian-Jun 1,2, LI Liang 1,2, HAN Ping 1,2, ZHANG Rong 1,2, ZHENG You-Dou 1,2, GONG Hai-Mei3
1Department of Physics, Nanjing University, Nanjing 2100932Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 2100933Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region
JI Xiao-Li 1,2;JIANG Ruo-Lian 1,2;XIE Zi-Li 1,2;LIU Bin 1,2;ZHOU Jian-Jun 1,2;LI Liang 1,2;HAN Ping 1,2;ZHANG Rong 1,2;ZHENG You-Dou 1,2;GONG Hai-Mei3
1Department of Physics, Nanjing University, Nanjing 2100932Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 2100933Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
摘要Thirty-pair Al0.3 Ga 0.7 N/AlN distributed Bragg reflectors centred at 320nm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy (AFM). Well-defined periodicity is shown by high resolution x-ray diffraction. High reflectivity of 93% at 313nm with a bandwidth of 13nm is obtained.
Abstract：Thirty-pair Al0.3 Ga 0.7 N/AlN distributed Bragg reflectors centred at 320nm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy (AFM). Well-defined periodicity is shown by high resolution x-ray diffraction. High reflectivity of 93% at 313nm with a bandwidth of 13nm is obtained.
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2007, Vol. 24 
