Ionizing Dose Effect of Thermal Oxides Implanted with Si+ Ions
CHEN Ming 1,2, LUO Hong-Wei 3, ZHANG Zheng-Xuan1, ZHANG En-Xia1, YANG Hui 1,2, TIAN Hao 1,2, WANG Ru 1,2, YU Wen-Jie 1,2
1Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 1000393CEPREI, Guangzhou 510610
Ionizing Dose Effect of Thermal Oxides Implanted with Si+ Ions
1Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 1000393CEPREI, Guangzhou 510610
摘要Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence (PL) method is engaged to investigate nanostructures of samples. Ar+ implanted samples are also studied by the same way to provide a comparison. The results show that Si+ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net positive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar+ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si+ implantation shows little dependence on implant dose of Ar+ ions. This is explained by possible increase of recombination centres.
Abstract：Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence (PL) method is engaged to investigate nanostructures of samples. Ar+ implanted samples are also studied by the same way to provide a comparison. The results show that Si+ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net positive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar+ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si+ implantation shows little dependence on implant dose of Ar+ ions. This is explained by possible increase of recombination centres.
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2007, Vol. 24 
