Physical mechanism of two-photon response in semi-insulating GaAs
LIU Xiu-Huan1, CHEN Zhan-Guo2, JIA Gang2, SHI Bao2
1State Key Laboratory on Integrated Optoelectronics, College of Communication Engineering, Jilin University, Changchun 1300122State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
Physical mechanism of two-photon response in semi-insulating GaAs
LIU Xiu-Huan1;CHEN Zhan-Guo2;JIA Gang2;SHI Bao2
1State Key Laboratory on Integrated Optoelectronics, College of Communication Engineering, Jilin University, Changchun 1300122State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
摘要The physical mechanism of two-photon response (TPR) in semi-insulating GaAs is studied. The measured photocurrent generated from the fabricated hemispherical GaAs sample responding to 1.3μm continuous wave laser shows a quadratic dependence on the coupled optical power and no saturation with the bias. The angular dependence of the photocurrent on the azimuth is in agreement with the anisotropy of double-frequency absorption (DFA) in GaAs single crystals. These results demonstrate DFA is the dominant mechanism of TPR in GaAs.
Abstract：The physical mechanism of two-photon response (TPR) in semi-insulating GaAs is studied. The measured photocurrent generated from the fabricated hemispherical GaAs sample responding to 1.3μm continuous wave laser shows a quadratic dependence on the coupled optical power and no saturation with the bias. The angular dependence of the photocurrent on the azimuth is in agreement with the anisotropy of double-frequency absorption (DFA) in GaAs single crystals. These results demonstrate DFA is the dominant mechanism of TPR in GaAs.
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2008, Vol. 25 
