Coherent Tunnelling in Coupled Quantum Wells under a Uniform Magnetic Field
GONG Jian1,2, YANG Fu-Hua1, FENG Song-Lin1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Department of Physics, Inner Mongolia University, Hohhot 010021
Coherent Tunnelling in Coupled Quantum Wells under a Uniform Magnetic Field
GONG Jian1,2;YANG Fu-Hua1;FENG Song-Lin1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Department of Physics, Inner Mongolia University, Hohhot 010021
摘要Coherent tunnelling is studied in the framework of the effective mass approximation for an asymmetric coupled quantum well. The Hartree potential due to the electron--electron interaction is considered in our calculation. The effects of the longitudinal and transverse magnetic field on coherent tunnelling characteristics are discussed. It has been found that the external field plays an important role in modulating the electron states.
Abstract:Coherent tunnelling is studied in the framework of the effective mass approximation for an asymmetric coupled quantum well. The Hartree potential due to the electron--electron interaction is considered in our calculation. The effects of the longitudinal and transverse magnetic field on coherent tunnelling characteristics are discussed. It has been found that the external field plays an important role in modulating the electron states.
GONG Jian;YANG Fu-Hua;FENG Song-Lin. Coherent Tunnelling in Coupled Quantum Wells under a Uniform Magnetic Field[J]. 中国物理快报, 2007, 24(8): 2383-2386.
GONG Jian, YANG Fu-Hua, FENG Song-Lin. Coherent Tunnelling in Coupled Quantum Wells under a Uniform Magnetic Field. Chin. Phys. Lett., 2007, 24(8): 2383-2386.
[1] Tsu R and Esaki L 1973 Appl. Phys. Lett. 22 562 [2] Cruz H, Hernandez-Cabrara A and Mu\~noz A 1992 Semicond. Sci. Technol. 7 332 [3] Cruz H and Muga J G 1992 J. Appl. Phys. 72 5750 [4] Ruiz-Diaz C E, Cruz H, Capuj N E and Luis D 1999 Semicond.Sci. Technol. 14 222 [5] Benderskii V A and Kats E I 2002 Phys. Rev. E 65036217 [6] Cruz H, Luis D, Delgado F and Muga J G 2004 Phys. Rev. B 70 195315 [7] Poggio M, Steeves G M, Myers R C, Stern N P, Gossard A C andAwschalom D D 2004 Phys. Rev. B 70 121305 [8] Bertoni A, Bordone P, Brunetti R, Jacoboni C and Reggiani S 2000 Phys. Rev. Lett. 84 5912 [9] Li S S et al 2001 J. Appl. Phys. 90 6151 [10] Li S S et el 2001 Proc. Natl. Acad. Sci. U.S.A. 98 11847 [11] Hayashi T, Fujisawa T, Jeong H D and Hirayama Y 2003 Phys. Rev. Lett. 91 226804 [12] Gorman J, Hasko D G and Williams D A 2005 Phys. Rev.Lett. 95 090502 [13] Turley P J and Teitsworth S W 1991 Phys. Rev. B 443199 [14] Gong J, Liang X X and Ban S L 2006 J. Appl. Phys. 100 023707 [15] Gong J, Liang X X and Ban S L 2005 Chin. Phys. 14 201 [16] Arnone D D, Marlow T P, Foden C L et al 1997 Phys. Rev. B 56 R4340