Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD
ZHAO Mei1, CHEN Xiao-Long2, WANG Wen-Jun2, ZHANG Zhi-Hua2, XU Yan-Ping2
1College of Materials Science and Engineering, Beijing University of Technology, Beijing 1000222Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD
摘要Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga2O3 to ε-Ga2O3.
Abstract：Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga2O3 to ε-Ga2O3.
(Methods of micro- and nanofabrication and processing)
引用本文:
ZHAO Mei;CHEN Xiao-Long;WANG Wen-Jun;ZHANG Zhi-Hua;XU Yan-Ping. Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD[J]. 中国物理快报, 2007, 24(8): 2401-2404.
ZHAO Mei, CHEN Xiao-Long, WANG Wen-Jun, ZHANG Zhi-Hua, XU Yan-Ping. Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD. Chin. Phys. Lett., 2007, 24(8): 2401-2404.
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