CHEN Dan, XIE Zhi-Qiang, WU Qian, ZHAO You-Yuan, LU Ming
The State Key Laboratory for Advanced Photonic Materials and Devices, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433
Electroluminescence of Si Nanocrystal-Doped SiO2
CHEN Dan;XIE Zhi-Qiang;WU Qian;ZHAO You-Yuan;LU Ming
The State Key Laboratory for Advanced Photonic Materials and Devices, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433
摘要We perform a comparative study on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystal-doped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.
Abstract：We perform a comparative study on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystal-doped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.
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2007, Vol. 24 
