Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates
REN Yun-Yun1, XU Bo1, WANG Zhan-Guo1, LIU-Ming2, LONG Shi-Bing2
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029
Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029
摘要GaAs (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of InAs quantum dots (QDs). InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentially nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.
Abstract：GaAs (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of InAs quantum dots (QDs). InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentially nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.
[1] Ozasa K, Aoyagi Y, Park Y J and Samuelson L 1997 Appl. Phys.Lett. 71 797 [2] Oshinowo J, Nishioka M, Ishida S and Arakawa Y 1994 Appl.Phys. Lett. 65 1421 [3] Schittenhelm P, Engel C and Findeis F 1998 J. Vac. Sci.Technol. B 16 1575 [4] Lundstrom T, Schoenfeld W, Lee H and Petroff P M 1999 Science 286 2312 [5] Kim H J, Motohisa J and Fukui T 2002 Appl. Phys. Lett. 81 5147 [6] Choi B H, Park C M and Song S H 2001 Appl. Phys. Lett. 78 1403 [7] Zhong Z Y and Bauer G 2004 Appl. Phys. Lett. 84 1922 [8] Nakamura Y, Schmidt O G and Jin-Phillipp N Y 2002 J. Cryst.Growth 242 339 [9] Xie Q, Madhukar A, Chen P and Kobayashi N P 1995 Phys. Rev.Lett. 75 2542 [10] Solomon G S, Trezza J A, Marshall A F and Harris J S 1996 Phys. Rev. Lett. 76 952 [11] Zhong Z Y, Halilovic A, Muhlberger M, Schaffler F and Bauer G2003 Appl. Phys. Lett. 82 445 [12] Zhong Z Y, Halilovic A, MUhlberger M, Schaffler F and Bauer G2003 J. Appl. Phys. 93 6258 [13] Ozdemir M, Zangwill A 1992 J. Vac. Sci. Technol. A 10 684 [14] Kar G S, Kiravittaya S, Stoffel M and Schmidt O G 2004 Phys.Rev. Lett. 93 246103 [15] Chen Y and Washburn J 1996 Phys. Rev. Lett. 77 4046
2007, Vol. 24 
