摘要A set of analytical models for the dc and small signal characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) are presented. A modified transferred-electron mobility model is adapted and a phenomenological low-field mobility model is developed. We calculate the channel charge considering the neutralization of donors and the contribution of free electrons in the AlGaN layer. The gate-to-source and gate-to-drain capacitances are obtained analytically, and the cut-off frequency is predicted. The models are implemented into the HSPICE simulator for the dc, ac and transient simulations and verified by experimental data for the first time. A high efficiency class-E GaN HEMT power amplifier is designed and simulated by the HSPICE to verify the applicability of our models.
Abstract：A set of analytical models for the dc and small signal characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) are presented. A modified transferred-electron mobility model is adapted and a phenomenological low-field mobility model is developed. We calculate the channel charge considering the neutralization of donors and the contribution of free electrons in the AlGaN layer. The gate-to-source and gate-to-drain capacitances are obtained analytically, and the cut-off frequency is predicted. The models are implemented into the HSPICE simulator for the dc, ac and transient simulations and verified by experimental data for the first time. A high efficiency class-E GaN HEMT power amplifier is designed and simulated by the HSPICE to verify the applicability of our models.
LI Miao;WANG Yan. A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors[J]. 中国物理快报, 2007, 24(10): 2998-3001.
LI Miao, WANG Yan. A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors. Chin. Phys. Lett., 2007, 24(10): 2998-3001.
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