摘要We report a diode-pumped intracavity frequency-doubled self-Q-switched and mode-locked Cr,Nd:YAG/KTP green laser with a Z-type cavity, which produces 1.5W of average power at 532nm with incident pump power 14.2W. The individual mode-locked green pulse duration is about 560ps with 149MHz repetition rate. Almost 100% modulation depth of the mode-locked green pulses is achieved at an incident pump power of 4.13W. The maximum energy of Q-switched green pulse is 19.8μJ. The experimental results of pulse duration and pulse energy of Q-switched green pulse agree well with the theoretical calculations.
Abstract:We report a diode-pumped intracavity frequency-doubled self-Q-switched and mode-locked Cr,Nd:YAG/KTP green laser with a Z-type cavity, which produces 1.5W of average power at 532nm with incident pump power 14.2W. The individual mode-locked green pulse duration is about 560ps with 149MHz repetition rate. Almost 100% modulation depth of the mode-locked green pulses is achieved at an incident pump power of 4.13W. The maximum energy of Q-switched green pulse is 19.8μJ. The experimental results of pulse duration and pulse energy of Q-switched green pulse agree well with the theoretical calculations.
(Frequency conversion; harmonic generation, including higher-order harmonic generation)
引用本文:
DU Shi-Feng;WANG Su-Mei;ZHANG Dong-Xiang;LI De-Hua;ZHANG Zhi-Guo;FENG Bao-Hua;ZHANG Shi-Wen. Green Output of 1.5W from a Diode-Pumped Intracavity Frequency-Doubled Self-Q-Switched and Mode-Locked Cr,Nd:YAG Laser[J]. 中国物理快报, 2007, 24(11): 3149-3152.
DU Shi-Feng, WANG Su-Mei, ZHANG Dong-Xiang, LI De-Hua, ZHANG Zhi-Guo, FENG Bao-Hua, ZHANG Shi-Wen. Green Output of 1.5W from a Diode-Pumped Intracavity Frequency-Doubled Self-Q-Switched and Mode-Locked Cr,Nd:YAG Laser. Chin. Phys. Lett., 2007, 24(11): 3149-3152.
[1] Wang J Y, Zheng Q, Xue Q H and Tan H M 2003 Chin. Opt.Lett. 1 604 [2] Mukhopadhyay P K, Alsous M B, Ranganathan K, Sharma S K, Gupta P K,George J and Nathan T P S 2003 Opt. Commun. 222 399 [3] Mukhopadhyay P K, Alsous M B, Ranganathan K, Sharma S K, Gupta P K,George J and Nathan T P S 2004 Appl. Phys. B 79 713 [4] Yang K J, Zhao S Z, Li G Q, Li M, Li D C, Wang J and An J2006 IEEE J. Quantum Electron. 42 683 [5] Chen Y F, Lee J L, Hsieh H D and Tsai S W 2002 IEEE J.Quantum Electron. 38 312 [6] Zhang S J, Wu E, Pan H F and Zeng H P 2004 IEEE J. QuantumElectron. 40 505 [7] Li S Q, Zhou S H, Wang P, Chen Y C and Lee K K 1993 Opt.Lett. 18 203 [8] Yang L, Feng B H, Zhang Z G, Gaebler V, Liu B N, Hans J E and ZhangS W 2002 Chin. Phys. Lett. 19 1450 [9] Yu T, Cui J W, Lu Y T and Hu Q Q 2001 Chin. J. Lasers B 10 321 [10] Du S F, Wang S M, Zhang D X, Feng B H, Zhang C Y, Zhang L, Zhang ZG and Zhang S W 2006 Chin. Phys. 15 1522 [11] Yang K J, Zhao S Z, Li M, Li G Q, Li D C, Wang J and An J 2007 J. Appl. Phys. 101 013105 [12] Siegman A E 1986 Lasers (Mill Valley, CA: University ScienceBooks) p 1122 [13] Degan J J 1995 IEEE J. Quantum Electron. 31 1890 [14] Koechner W 1996 Solid State Laser Engineering 4th edn(Berlin: Springer) p 49 [15] Burshtein Z, Blau P, Kalisky Y, Shimony Y and Kikta M R 1998 IEEE J. Quantum Electron. 34 292