State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
摘要The subband energy and lasing wavelength of compressively strained triangular In0.53Ga0.47As/InAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31As barrier is introduced. The results show that lasing wavelength can be extended dramatically to beyond 2.8μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.
Abstract：The subband energy and lasing wavelength of compressively strained triangular In0.53Ga0.47As/InAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31As barrier is introduced. The results show that lasing wavelength can be extended dramatically to beyond 2.8μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.
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2007, Vol. 24 
