Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well
WANG Chong1,2, LIU Zhao-Lin2, CHEN Xue-Mei3, XIA Chang-Sheng2, ZHANG Shu1, YANG Yu1, LU Wei2
1Research Institute of Engineering and Technology, Yunnan University, Kunming 6500912National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000833Research Center for Detectors, Kunming Institute of Physics, Kunming 650034
Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well
WANG Chong1,2;LIU Zhao-Lin2;CHEN Xue-Mei3;XIA Chang-Sheng2;ZHANG Shu1;YANG Yu1;LU Wei2
1Research Institute of Engineering and Technology, Yunnan University, Kunming 6500912National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000833Research Center for Detectors, Kunming Institute of Physics, Kunming 650034
摘要Five InAs/InxGa1-xAs quantum dots in a well (DWELL) with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence (PL) experiments indicate that the ground state peaks of InAs/In0.15Ga0.85As and InAs/In0.22Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.
Abstract：Five InAs/InxGa1-xAs quantum dots in a well (DWELL) with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence (PL) experiments indicate that the ground state peaks of InAs/In0.15Ga0.85As and InAs/In0.22Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.
WANG Chong;LIU Zhao-Lin;CHEN Xue-Mei;XIA Chang-Sheng;ZHANGShu;YANG Yu;LU Wei. Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well[J]. 中国物理快报, 2007, 24(11): 3260-3263.
WANG Chong, LIU Zhao-Lin, CHEN Xue-Mei, XIA Chang-Sheng, ZHANGShu, YANG Yu, LU Wei. Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well. Chin. Phys. Lett., 2007, 24(11): 3260-3263.
[1] Krishna S 2005 Infrared Phys. Technol. 47 153 [2] Eliseev P G, Li H, Liu G T, Stintz A, Lester L F and Malloy K J2001 IEEE J. Quantum Electron. 7 135 [3] Stintz A, Liu G T, Gray A L, Spillers R, Delgado S M and Malloy K J2000 J. Vac. Sci. Technol. B 18 1496 [4] Ustinov V M, Maleev N A, A. Zhukov E, Kovsh A R, Egorov A Y, LunevA V and Bimberg D 1999 Appl. Phys. Lett. 74 2815 [5] Liu H Y, Hopkinson M, Harrison C N, Frith R, Mowbray D J andSkolnick M S 2003 J. Appl. Phys. 93 2931 [6] Chen J X, Oesterle U, Ffiore A, Stanley R P, Delgado S M and MolloyK J 2001 Appl. Phys. Lett. 79 3681 [7] Park Y M, Park Y J, Kim K M, Shin J C, Song J D, Lee J L and Yoo KH 2004 J. Appl. Phys. 95 123 [8] Krishna S, Forman D, Annamalai S, Dowd P and Carothers D 2005 Appl. Phys. Lett. 86 193501 [9] Wang C, Chen P P, Tang N Y, Xia C S, Lu W and Chen Z H 2006 J.Crystal. Growth 289 547 [10] Wang C, Chen P P, Zhou X C, Wang S W, Chen X S and Lu W 2005 Acta Phys. Sin. 54 3337 (in Chinese) [11] Wang C, Chen P P, Liu Z L, Li T X and Lu W 2006 Acta Phys.Sin. 55 3636 (in Chinese) [12] Zhukov A E, Kovsh A R, Maleev N A, Mikhrin S S, Ustinov V M,Maximov M V, Ledentsov N N and Bimberg D 1999 Appl. Phys. Lett. 75 1926 [13] Maximov M V, Tsatsul'nikov A F, Heitz R, Bimberg D and MusikhinY G2000 Phys. Rev. B 62 16671 [14] Guffarth F, Heitz R, Schliwa A, Childs D and Murray R 2001 Phys. Rev. B 64 085305 [15] Li H, Zhuang Q, Wang Z and Daniels T 2000 J. Appl.Phys. 87 188
2007, Vol. 24 
