Vaporization and Plasma Shielding during High Power Nanosecond Laser Ablation of Silicon and Nickel
LIU Dan1, ZHANG Duan-Ming2
1Department of Physics and Electronic Engineering, Hubei University of Education, Wuhan 4302052Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
Vaporization and Plasma Shielding during High Power Nanosecond Laser Ablation of Silicon and Nickel
LIU Dan1;ZHANG Duan-Ming2
1Department of Physics and Electronic Engineering, Hubei University of Education, Wuhan 4302052Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
摘要A thermal model to describe the high-power nanosecond pulsed laser ablation is presented. It involves the vaporization and the following plasma shielding effect on the whole ablation process. As an example of Si target, we obtain the time evolution of the calculated surface temperature, ablation rate and ablation depth. It can be seen that plasma shielding plays a more important role in the ablation process with time. At the same time, the ablation depth with laser fluence based on different models is shown. Moreover, we simulate the pulsed laser irradiation Ni target. The evolution of the transmitted intensity and the variation of ablation depth per pulse with laser fluence are performed. Under the same experimental conditions, the numerical results calculated with our thermal model are more in agreement with the experimental data.
Abstract：A thermal model to describe the high-power nanosecond pulsed laser ablation is presented. It involves the vaporization and the following plasma shielding effect on the whole ablation process. As an example of Si target, we obtain the time evolution of the calculated surface temperature, ablation rate and ablation depth. It can be seen that plasma shielding plays a more important role in the ablation process with time. At the same time, the ablation depth with laser fluence based on different models is shown. Moreover, we simulate the pulsed laser irradiation Ni target. The evolution of the transmitted intensity and the variation of ablation depth per pulse with laser fluence are performed. Under the same experimental conditions, the numerical results calculated with our thermal model are more in agreement with the experimental data.
LIU Dan;ZHANG Duan-Ming. Vaporization and Plasma Shielding during High Power Nanosecond Laser Ablation of Silicon and Nickel[J]. 中国物理快报, 2008, 25(4): 1368-1371.
LIU Dan, ZHANG Duan-Ming. Vaporization and Plasma Shielding during High Power Nanosecond Laser Ablation of Silicon and Nickel. Chin. Phys. Lett., 2008, 25(4): 1368-1371.
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2008, Vol. 25 
