Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si
Nam H. KIM1, WANG Ke-Qiang1,2, ZHANG Yu3, WANG Jian-Qing1
1Department of Physics, State University of New York, Binghamton, NY 13902, USA2School of Information, Zhongkai University of Agriculture and echnology, Guangzhou 5102253Department of Electrical Engineering, State University of New York, Binghamton, NY 13902, USA
Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si
Nam H. KIM1;WANG Ke-Qiang1,2;ZHANG Yu3;WANG Jian-Qing1
1Department of Physics, State University of New York, Binghamton, NY 13902, USA2School of Information, Zhongkai University of Agriculture and echnology, Guangzhou 5102253Department of Electrical Engineering, State University of New York, Binghamton, NY 13902, USA
摘要Nanoscaled spin-dependent tunnelling lines were patterned on doped Si and studied for tunnelling from the SDT ferromagnetic layer through an insulating barrier into Si. The injection contacts have the form of long strips with width and separation, ranging from 100nm to 2μm, and are patterned using e-beam lithography. The measured I-V characteristics versus temperature (80 to 300K) on the 100nm scaled devices between the layered-magnetic metals and the semiconductor clearly showed ballistic tunnelling, with weak dependence on the temperature. This is qualitatively different, at elevated temperatures, from 2-μm-wide scaled-up spin-dependent tunnelling structures, where thermal-ionic emission was observed to dominate carrier transport.
Abstract：Nanoscaled spin-dependent tunnelling lines were patterned on doped Si and studied for tunnelling from the SDT ferromagnetic layer through an insulating barrier into Si. The injection contacts have the form of long strips with width and separation, ranging from 100nm to 2μm, and are patterned using e-beam lithography. The measured I-V characteristics versus temperature (80 to 300K) on the 100nm scaled devices between the layered-magnetic metals and the semiconductor clearly showed ballistic tunnelling, with weak dependence on the temperature. This is qualitatively different, at elevated temperatures, from 2-μm-wide scaled-up spin-dependent tunnelling structures, where thermal-ionic emission was observed to dominate carrier transport.
Nam H. KIM;WANG Ke-Qiang;ZHANG Yu;WANG Jian-Qing. Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si[J]. 中国物理快报, 2008, 25(4): 1407-1410.
Nam H. KIM, WANG Ke-Qiang, ZHANG Yu, WANG Jian-Qing. Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si. Chin. Phys. Lett., 2008, 25(4): 1407-1410.
[1]Baibich M N, Broto J M, Fert A, van Dau F N, Petroff F,Etienne P, Creuzet G, Friederich A and Chazeles J 1988 Phys.Rev. Lett. 61 2472 [2] Binach G, Grunberg P, Saurenbach F and Zinn W 1989 Phys. Rev. B 39 4828 [3] Krebs J J, Lubitz P, Chaiken A and Prinz G A 1989 Phys. Rev. Lett. 63 1645 [4] Vidan A, Stopa M, Westervelt R M, Hanson M and Gossard A C2006 Phys. Rev. Lett. 96 156802 [5] Kikkawa J M and Awschalom D D 1998 Nature 397139141 Kikkawa J M and Awschalom D D 1998 Phys. Rev. Lett. 80 4313 [6] Wolf S A, Awshalom D D, Buhrman R A, Daughton J M, vonMonar S, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science 294 1405 [7] Schmidt G, Ferrand D, Molenkamp L W, Filip A T, and vanWees N J 2000 Phys. Rev. B 62 R4790 [8] Fert A and Jaffres H 2001 Phys. Rev. B 64184420 [9] Crooker S A, Furis M, Lou X, Adelmann C, Smith D L,Palmstr{\om C J, Crowell P A 2005 Science 309 2191 [10] Jiang X, Wang R, Shelby R M, Macfarlane R M, Bank S R,Harris J S and Parkin S S P 2005 Phys. Rev. Lett. 94056601 [11] Wang D, Daughton J M, Wang W, and Wang J-Q 2000 IEEETrans. Magn. 36 2802 [12] Tsybeskov L, Moore K L, Hall D G, and Fauchet, 1996 Phys. Rev. B 54 R8361 [13] Cardona M, Meyer T A, and Thewalt M L W, 2004 Phys.Rev. Lett. 92 196403-1
2008, Vol. 25 
