摘要The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355nm Nd:YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.
Abstract：The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355nm Nd:YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.
(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
引用本文:
ZHAN Mei-Qiong;WU Zhong-Lin;FAN Zheng-xiu. Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation[J]. 中国物理快报, 2008, 25(2): 563-565.
ZHAN Mei-Qiong, WU Zhong-Lin, FAN Zheng-xiu. Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation. Chin. Phys. Lett., 2008, 25(2): 563-565.
[1] Thielsch R, Gatto A and Heber J et al 2002 Thin SolidFilms 410 86 [2] Reichling M, Bodemann A and Kaiser N 1998 Thin SolidFilms 320 264 [3] Kozlowski M R and Thomas I M 1994 Proc. SPIE 2262 54 [4] Bodemann A, Kaiser N and Kozlowski M R et al 1995 Proc. SPIE 2714 395 [5] Dijon J, Hue J and Disgecmez A et al 1996 Proc. SPIE 2714 416 [6] Kaiser N, Uhlig H and Schallenberg U B et al 1995 Thin Solid Films 260 86 [7] Dijon J, Quesnel E and Rolland B et al 1998 Proc.SPIE 3244 406 [8] Varasi M, Misiano C and Lasaponara L 1984 Thin SolidFilms 117 163 [9] Welsch E, Ettrich K and Blaschke H et al 1996 Appl.Surf. Sci. 96-98 393 [10]Blanco M A, Pendas A M and Francisco E et al 1996 J.Molecular Structure 368 245 [11] Shimizu I, Setsuhara Y and Miyake S et al 2000 Surf.Coatings Technol. 131 187 [12] Shang S Z, Chen L and Hou H H et al 2005 Appl.Surf. Sci. 242 437 [13] Zukic J M, Torr D G, Spann J F and Torr M R 1990 Appl. Opt. 29 4284 [14] Zhang D P, Shao J D and Zhang D W et al 2004 Opt.Lett. 29 2870 [15] Zhan M Q, Zhang D P and Tan T Y et al 2005 Chin.Phys. Lett. 22 1246 [16] Zhan M Q, Zhao Y A and Tian G L et al 2005 Appl.Phys. B 80 1007 [17] Pan Y J and Feng J 1997 Semiconduct. Optoelectron. 18 61
2008, Vol. 25 
