摘要We investigate the fragmentation behaviour of decamethylcyclopentasiloxane (DMCPS) plasma using a quadrupole mass spectrometry, which is used as the precursor to deposit SiCOH film in an electron cyclotron resonance (ECR) plasma system. The structure of DMCPS molecules comprises a fivefold Si--O ring and ten -CH3 groups bonded at five Si atoms. In ECR discharge plasma, the main fragmentation behaviour of DMCPS includes two stages. One is the breaking of fivefold Si--O rings and then the formation of threefold Si--O rings and Si--O chain species. The other is the decomposing of hydrocarbon groups from Si atoms and then the crosslink of hydrocarbon species. Combined with the bonding configuration of SiCOH films, the relation between species in ECR plasma and films structures is analysed.
Abstract：We investigate the fragmentation behaviour of decamethylcyclopentasiloxane (DMCPS) plasma using a quadrupole mass spectrometry, which is used as the precursor to deposit SiCOH film in an electron cyclotron resonance (ECR) plasma system. The structure of DMCPS molecules comprises a fivefold Si--O ring and ten -CH3 groups bonded at five Si atoms. In ECR discharge plasma, the main fragmentation behaviour of DMCPS includes two stages. One is the breaking of fivefold Si--O rings and then the formation of threefold Si--O rings and Si--O chain species. The other is the decomposing of hydrocarbon groups from Si atoms and then the crosslink of hydrocarbon species. Combined with the bonding configuration of SiCOH films, the relation between species in ECR plasma and films structures is analysed.
ZHANG Hai-Yan;YE Chao;NING Zhao-Yuan. Mass Spectrometry Investigation on Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma for SiCOH Film Deposition[J]. 中国物理快报, 2008, 25(2): 636-639.
ZHANG Hai-Yan, YE Chao, NING Zhao-Yuan. Mass Spectrometry Investigation on Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma for SiCOH Film Deposition. Chin. Phys. Lett., 2008, 25(2): 636-639.
[1] Shamiryan D, Abell T, Iacopi F and Maex K 2004 Mater.Today 7 34 [2] Maex K, Baklanov M R, Shamiryan D et al 2003 J. Appl.Phys. 93 8793 [3] Grill A 2003 J. Appl. Phys. 93 1785 [4] Ye C, Ning Z Y, Wang T T et al 2007 J. Electrochem.Soc. 154 G63 [5] Lubguban J, Rajagopalan T, Mehta N et al 2002 J.Appl. Phys. 92 1033 [6] Yang C S, Yu Y H, Lee K M et al 2003 Thin SolidFilms 435 165 [7] Burkey D D and Gleason K K 2003 J. Appl. Phys. 93 5143 [8] Favenneca L, Jousseaumeb V, Rouessacc V et al 2004 Mater. Sci. Semicon. Proc. 7 277 [9] Aumaille K, Granier A, Grolleau B et al 2001 J. Appl.Phys. 89 5227 [10] Takeuchi T, Tanaka M, Matsutani T et al 2002 Surf.Coat. Technol. 158-159 408 [11] Grill A and Neumayer D A 2003 J. Appl. Phys. 94 6697 [12] Ye C, Ning Z Y, Xin Y et al 2005 Microelectron.Engin. 82 35
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