Preparation of GaN Thin Films by Reactive Ionized Cluster Beam Technique
MENG Xian-quan, ZHAO Chun, WANG Qiong, ZHANG Guan-ming, LUO Hai-lin, YE Ming-sheng, GUO Huai-xi, FAN Xiang-jun
Department of Physics, Wuhan University, Wuhan 430072
Preparation of GaN Thin Films by Reactive Ionized Cluster Beam Technique
MENG Xian-quan;ZHAO Chun;WANG Qiong;ZHANG Guan-ming;LUO Hai-lin;YE Ming-sheng;GUO Huai-xi;FAN Xiang-jun
Department of Physics, Wuhan University, Wuhan 430072
关键词 ：
68.55.Nq ,
68.55.-a
Abstract ： GaN thin films were prepared by reactive ionized cluster beam technique at relatively low substrate temperature about 400o C. The composition, structure and morphology of the films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The binding energy of N Is electron in the film is 397.85eV which shows the formation of Ga-N bonding. The film has a polycrystalline structure revealed by the measurement results of TEM and SEM. It was found that raising nitrogen ion ratio in the beam is helpful to decrease oxygen content in the film.
Key words ：
68.55.Nq
68.55.-a
出版日期: 1999-05-01
:
68.55.Nq
(Composition and phase identification)
68.55.-a
(Thin film structure and morphology)
引用本文:
MENG Xian-quan;ZHAO Chun;WANG Qiong;ZHANG Guan-ming;LUO Hai-lin;YE Ming-sheng;GUO Huai-xi;FAN Xiang-jun. Preparation of GaN Thin Films by Reactive Ionized Cluster Beam Technique[J]. 中国物理快报, 1999, 16(5): 367-369.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I5/367
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1999, Vol. 16 
