Effect of Si/Sil-yCy/Si Barriers on the Characteristics of Sil-xGex/Si Resonant Tunneling Structures
HAN Ping, CHENG Xue-Mei
Department of Physics, Nanjing University, Nanjing 210093
Masao Sakuraba, Young-Cheon Jeong, Takashi Matsuura, Junichi Murota Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Effect of Si/Sil-yCy/Si Barriers on the Characteristics of Sil-xGex/Si Resonant Tunneling Structures
HAN Ping;CHENG Xue-Mei
Department of Physics, Nanjing University, Nanjing 210093
Masao Sakuraba, Young-Cheon Jeong, Takashi Matsuura, Junichi Murota Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Abstract： P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6Ge0.4spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (I-V) characteristics of RTD’s of the barriers of Si layers with that of Si/ Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/ Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/ Si1-yCy/Si barriers. The possible mechanism for the observed I- V characteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.
(Junction breakdown and tunneling devices (including resonance tunneling devices))
引用本文:
HAN Ping;CHENG Xue-Mei. Effect of Si/Sil-yCy/Si Barriers on the Characteristics of Sil-xGex/Si Resonant Tunneling Structures[J]. 中国物理快报, 2000, 17(11): 844-846.
HAN Ping, CHENG Xue-Mei. Effect of Si/Sil-yCy/Si Barriers on the Characteristics of Sil-xGex/Si Resonant Tunneling Structures. Chin. Phys. Lett., 2000, 17(11): 844-846.
2000, Vol. 17 
