Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders

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	WENG Yumin
	ZHENG Qingping
	FAN Zhineng
	ZONG Xiangfu

关键词 ： 71.55.-h, 78.55.-r

Abstract： Rapid thermal annealing induced acceptor levels and their annealing behavior in semi-insulating GaAs were investigated using the photoluminescence technique. Results suggest that the introduction of excess of VGa and GaAs, related acceptors might lead to thermal conversion of GaAs wafers.

Key words： 71.55.-h 78.55.-r

出版日期: 1992-07-01

:	71.55.-h
	78.55.-r

引用本文:

WENG Yumin;ZHENG Qingping;FAN Zhineng;ZONG Xiangfu. Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders[J]. 中国物理快报, 1992, 9(7): 375-378.
WENG Yumin, ZHENG Qingping, FAN Zhineng, ZONG Xiangfu. Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders. Chin. Phys. Lett., 1992, 9(7): 375-378.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y1992/V9/I7/375