Metal-Organic Chemical Vapor Deposition Growth of GaAs.AIAs Double Barrier Resonant Tunneling Diode
REN Hongwen, HUANG Baibiao, XU Xiangang, LIU Shiwen, JIANG Minhua, YU Shuqin
Institute of Crystal Materials, Shandong University, Jinan 250100
Metal-Organic Chemical Vapor Deposition Growth of GaAs.AIAs Double Barrier Resonant Tunneling Diode
REN Hongwen;HUANG Baibiao;XU Xiangang;LIU Shiwen;JIANG Minhua;YU Shuqin
Institute of Crystal Materials, Shandong University, Jinan 250100
关键词 ：
68.55.Ce ,
85.30.Mn ,
73.20.Dx
Abstract ： We have growth two structures of AIAs/GaAs/AIAs double barrier resonant tunneling diodes by metal-organic chemical vapor deposition. The resonances to the first excited states were obtained, the measured peak-to-valley current ratio is 1.3 at 77K, room temperature peak current is 8kA/cm2 , the resonance voltages are in agreement with the theoretical approach by transfer-matrix method.
Key words ：
68.55.Ce
85.30.Mn
73.20.Dx
出版日期: 1992-05-01
引用本文:
REN Hongwen;HUANG Baibiao;XU Xiangang;LIU Shiwen;JIANG Minhua;YU Shuqin
. Metal-Organic Chemical Vapor Deposition Growth of GaAs.AIAs Double Barrier Resonant Tunneling Diode[J]. 中国物理快报, 1992, 9(5): 258-261.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1992/V9/I5/258
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