High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds
WANG Wanlu, GAO Jinying, LIAO Kejun
Department of Physics, Lanzhou University, Lanzhou 730000
High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds
WANG Wanlu;GAO Jinying;LIAO Kejun
Department of Physics, Lanzhou University, Lanzhou 730000
关键词 ：
81.15.Gh ,
68.55.Gi ,
79.60.-i
Abstract ： Diamond film have been synthesized by dc plasma chemical vapour deposition (CVD) from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220μm/h. The films obtained have good crystallinity that are chaxacte-ized by Raman spectrometry, scanning electron microscopy and x-ray diffraction. X-ray photoelectron spectroscopy analysis have confirmed that diamond nucleation and growth are on SiC rather than on clean Si. The mechanism of high rate growth diamond film have been discussed too.
Key words ：
81.15.Gh
68.55.Gi
79.60.-i
出版日期: 1992-08-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.Gi
79.60.-i
(Photoemission and photoelectron spectra)
引用本文:
WANG Wanlu;GAO Jinying;LIAO Kejun. High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds[J]. 中国物理快报, 1992, 9(8): 444-447.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1992/V9/I8/444
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