Hole Concentration Dependence of Tc in Bi2Sr2CaCu2Oy System
FANG Minghu, XU Zhuan, WEI Hongbin, ZENG Xingbin, HU Gangjin, ZHANG Xuanjia, ZHANG Qirui, WU Yuming*, WANG Qidong*, SHA Jian**, CAO Liezhao**
Department of Physics, Zhejiang University, Hangzhou 310027
*Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027
**Department of Physics, University of Science and Technology of China, Hefei 230026
Hole Concentration Dependence of Tc in Bi2Sr2CaCu2Oy System
Department of Physics, Zhejiang University, Hangzhou 310027
*Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027
**Department of Physics, University of Science and Technology of China, Hefei 230026
Abstract： The resistance, ac susceptibility and Hall coefficient measurements were carried out for the high quality single phase Bi2Sr2CaCu2Oy samples with different oxygen contents. It is found that the number of extra oxygen atoms in the samples can be easily modulated when they are annealed in low vacuum, and that the relationship between Tc and P+ is unmonotonic with an optimum P+ =0.27holes/CuO2 plane corresponding to the highest Tc(=95 K). This unmonotonic relationship is discussed briefly.
1992, Vol. 9 
