Characteristics of the Plasma During Chemical Vapor Deposition for Diamond Growth
GAO Kelin*,ZHAN Rujuan, WANG Chunlin, CAO Jinxiang, XIANG Zhilin
*Wuhan Institute of Physics, Academia Sinica, Wuhan 430071
University of Science and Technology of China, Hefei 230026
Characteristics of the Plasma During Chemical Vapor Deposition for Diamond Growth
GAO Kelin*,ZHAN Rujuan;WANG Chunlin;CAO Jinxiang;XIANG Zhilin
*Wuhan Institute of Physics, Academia Sinica, Wuhan 430071
University of Science and Technology of China, Hefei 230026
关键词 ：
52.40.Hf ,
52.80.Hc ,
81.15.Gh
Abstract ： During the course of diamond growth by dc plasma chemical vapor deposition and microwave plasma chemical vapor deposition, characteristics of the plasma were measured by Langmuir single probe, double probe, emission spectrometer and microwave interferometer. The relationships between plasma parameters and the concentration of hydrocarbon, the power, pressure and the gas flow rate are discussed.
Key words ：
52.40.Hf
52.80.Hc
81.15.Gh
出版日期: 1992-03-01
:
52.40.Hf
(Plasma-material interactions; boundary layer effects)
52.80.Hc
(Glow; corona)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
GAO Kelin*;ZHAN Rujuan;WANG Chunlin;CAO Jinxiang;XIANG Zhilin
. Characteristics of the Plasma During Chemical Vapor Deposition for Diamond Growth
[J]. 中国物理快报, 1992, 9(3): 144-147.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1992/V9/I3/144
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