Passivating Studies on a P2S5/NH4OH-treated GaAs Surface Using Photoluminescence

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	WENG Yumin
	FAN Zhineng
	ZONG Xiangfu

关键词 ： 68.55.+p, 78.55.-r, 71.55.-h

Abstract： We demonstrated that the photoluminescence intensity and its contrast obtained on liquid encapsulated Czochralski GaAs depend on the surface recombination and they are controlled by chemical surface treatments. We have successfully passivated the surface of GaAs wafer on the basis of P₂S₅/NH₄OH treatment.

Key words： 68.55.+p 78.55.-r 71.55.-h

出版日期: 1992-05-01

:	68.55.+p
	78.55.-r
	71.55.-h

引用本文:

WENG Yumin;FAN Zhineng;ZONG Xiangfu. Passivating Studies on a P₂S₅/NH₄OH-treated GaAs Surface Using Photoluminescence[J]. 中国物理快报, 1992, 9(5): 254-257.
WENG Yumin, FAN Zhineng, ZONG Xiangfu. Passivating Studies on a P₂S₅/NH₄OH-treated GaAs Surface Using Photoluminescence. Chin. Phys. Lett., 1992, 9(5): 254-257.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y1992/V9/I5/254