Microscopic Phase-Field Simulation of Atom Substitution Behaviour in Ni--Cr--Al Alloy
CHU Zhong, CHEN Zheng, WANG Yong-Xin, LU Yan-Li, ZHANG Jian-Jun
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072
Microscopic Phase-Field Simulation of Atom Substitution Behaviour in Ni--Cr--Al Alloy
CHU Zhong;CHEN Zheng;WANG Yong-Xin;LU Yan-Li;ZHANG Jian-Jun
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072
关键词 :
05.10.Gg ,
81.30.Hd ,
81.30.Mh
Abstract : Simulations are performed on atom substitution behaviour in Ni75 Al25-x Crx alloys based on a microscopic phase-field model at 873K. The ordering of both the Al and Cr atoms takes place simultaneously, Cr occupies both the Al and Ni sites with a preference for the Al sites, and Cr and Al atoms together occupy the β -sites, and the complex γ’ Ni3 (Al1-x Crx ) (L12 structure) phases are formed during the precipitation. At the ordering boundary of L12 phases, Cr atoms occupy the Al sites, then Ni3 Cr phases are formed.
Key words :
05.10.Gg
81.30.Hd
81.30.Mh
出版日期: 2005-08-01
:
05.10.Gg
(Stochastic analysis methods)
81.30.Hd
(Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder)
81.30.Mh
(Solid-phase precipitation)
引用本文:
CHU Zhong;CHEN Zheng;WANG Yong-Xin;LU Yan-Li;ZHANG Jian-Jun. Microscopic Phase-Field Simulation of Atom Substitution Behaviour in Ni--Cr--Al Alloy[J]. 中国物理快报, 2005, 22(8): 1841-1844.
CHU Zhong, CHEN Zheng, WANG Yong-Xin, LU Yan-Li, ZHANG Jian-Jun. Microscopic Phase-Field Simulation of Atom Substitution Behaviour in Ni--Cr--Al Alloy. Chin. Phys. Lett., 2005, 22(8): 1841-1844.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I8/1841
[1]
ZHU Jian-Zhou. Intermittency Growth in Fluid Turbulence [J]. 中国物理快报, 2006, 23(8): 2139-2142.
[2]
Raid A. Ismail;Kadhim A. Hubeatir;Abdullah K. Abass. Amorphous/Crystalline (n-n) Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique [J]. 中国物理快报, 2006, 23(2): 370-373.
[3]
ZHAN Yong;AN Hai-Long;YU Hui;ZHANG Su-Hua;HAN Ying-Rong. Dynamical Properties of Potassium Ion Channels with a Hierarchical Model [J]. 中国物理快报, 2006, 23(11): 2906-2908.
[4]
QIAO Bao-Wei;FENG Jie;LAI Yun-Feng;LING Yun;LIN Yin-Yin;TANG Ting-Ao;CAI Bing-Chu;CHEN Bomy. Improvement of Electrical Properties of the Ge2 Sb2 Te5 Film by Doping Si for Phase-Change Random Access Memory [J]. 中国物理快报, 2006, 23(1): 172-174.
[5]
ZHU Ping;CHEN Shi-Bo;MEI Dong-Cheng. Intensity Correlation Function and Associated Relaxation Time of a Saturation Laser Model with Correlated Noises [J]. 中国物理快报, 2006, 23(1): 29-31.
[6]
CUI Can;YANG De-Ren;MA Xiang-Yang;FU Li-Ming;FAN Rui-Xin;QUE Duan-Lin. Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers [J]. 中国物理快报, 2005, 22(9): 2407-2410.
[7]
BAO Jing-Dong;BAI Zhan-Wu. Ballistic Diffusion of a Charged Particle in a Blackbody Radiation Field [J]. 中国物理快报, 2005, 22(8): 1845-1847.
[8]
ZHANG Ting;LIU Bo;SONG Zhi-Tang;LIU Wei-Li;FENG Song-Lin;CHEN Bomy. Phase Transition Phenomena in Ultra-Thin Ge2 Sb2 Te5 Film [J]. 中国物理快报, 2005, 22(7): 1803-1805.
[9]
ZHANG Xue-Ru. Identification of Ag37 Sn33 Te30 Phase-Change Films for Optical Data Storage [J]. 中国物理快报, 2005, 22(6): 1436-1438.
[10]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin; CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method [J]. 中国物理快报, 2005, 22(3): 758-761.
[11]
FENG Juan;ZHUO Yi-Zhong;. Master Equation Approach to Molecular Motor’s Directed Motion [J]. 中国物理快报, 2005, 22(2): 503-506.
[12]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2 Sb2 Te5 Films [J]. 中国物理快报, 2004, 21(6): 1143-1146.
[13]
ZHANG Ting;LIU Bo;XIA Ji-Lin;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Structure and Electrical Properties of Ge2 Sb2 Te5 Thin Film Used for Ovonic Unified Memory [J]. 中国物理快报, 2004, 21(4): 741-743.
[14]
WANG Jun;CAO Li;;WU Da-Jin;. Influences of Modulated Noise on Normalized Intensity Fluctuation in a Single-Mode Laser [J]. 中国物理快报, 2004, 21(2): 246-249.
[15]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method [J]. 中国物理快报, 2004, 21(10): 2054-2056.