Abstract： Silicon single crystals with a SiO2 overlayer of various thicknesses ( 1000-6000Å ) were implanted by 120 and 160keV Si-ions to doses in a range of (0.5-1.0)x1017cm-2 to study the visible light emission in their as-implanted and post-annealed states. An emission band peaked around 2.0eV was visible in the photoluminescence (PL) spectra of all the as-implanted samples. After post-annealing at 1100°C in a flowing N2 gas, it was found that a visible band peaked in the range of 1.7eV is detectable from all the samples and that the PL intensity exihibits a correlation with the oxygen concentration in the implanted region. Possible mechanisms responsible for the observed light emission were also discussed.
LAN Ai-dong;LIU Bai-xin;BAI Xin-de. Luminescence from Si/SiO2 with Si Implantation[J]. 中国物理快报, 1997, 14(7): 549-552.
LAN Ai-dong, LIU Bai-xin, BAI Xin-de. Luminescence from Si/SiO2 with Si Implantation. Chin. Phys. Lett., 1997, 14(7): 549-552.
1997, Vol. 14 
