Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature
JIA Yu-Lei1 , LING Wei-Jun1 , WEI Zhi-Yi1 , WANG Yong-Gang2 , MA Xiao-Yu2
1 Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature
JIA Yu-Lei1 ;LING Wei-Jun1 ;WEI Zhi-Yi1 ;WANG Yong-Gang2 ;MA Xiao-Yu2
1 Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
42.65.Re ,
42.60.Fc ,
42.55.Xi ,
42.60.Lh
Abstract ： We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.
Key words ：
42.65.Re
42.60.Fc
42.55.Xi
42.60.Lh
出版日期: 2005-10-01
:
42.65.Re
(Ultrafast processes; optical pulse generation and pulse compression)
42.60.Fc
(Modulation, tuning, and mode locking)
42.55.Xi
(Diode-pumped lasers)
42.60.Lh
(Efficiency, stability, gain, and other operational parameters)
引用本文:
JIA Yu-Lei;LING Wei-Jun;WEI Zhi-Yi;WANG Yong-Gang;MA Xiao-Yu. Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature[J]. 中国物理快报, 2005, 22(10): 2575-2577.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I10/2575
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