Photoelectric Properties of Si-Sil-x Gex -Ge Heterostructures for Infrared Detector
JIANG Ruo-lian, JIANG Ning, GU Shu-lin, LI Zhao, XU Jun, ZHU Shun-ming, HU Li-qun, ZHENG You-dou
Department of Physics, Nanjing University, Nanjing 210093
Photoelectric Properties of Si-Sil-x Gex -Ge Heterostructures for Infrared Detector
JIANG Ruo-lian;JIANG Ning;GU Shu-lin;LI Zhao;XU Jun;ZHU Shun-ming;HU Li-qun;ZHENG You-dou
Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
78.66.-w ,
85.60.Dw
Abstract ： Si-Sil-x Gex -Ge heterostructures with Ge fraction graded linearly from 1 to 0 have been epitaxially grown on Ge substrates by rapid, thermal process/very low pressure-chemical vapor deposition. The peak value of the spectrum response for these structures ranges from 1.3 to 1.55 μm, which is just in accordance with the optical fiber communication window, and considered to be the superposition of the response in Sil-x Gex absorption region and the Ge absorption region. High detecting sensitivity, and low dark current have been achieved from the prototype SiGe ptype intrinsic n-type photodetectors made of these structures.
Key words ：
78.66.-w
85.60.Dw
出版日期: 1997-11-01
:
78.66.-w
(Optical properties of specific thin films)
85.60.Dw
(Photodiodes; phototransistors; photoresistors)
引用本文:
JIANG Ruo-lian;JIANG Ning;GU Shu-lin;LI Zhao;XU Jun;ZHU Shun-ming;HU Li-qun;ZHENG You-dou. Photoelectric Properties of Si-Sil-x Gex -Ge Heterostructures for Infrared Detector[J]. 中国物理快报, 1997, 14(11): 876-878.
l-x Gex -Ge Heterostructures for Infrared Detector. Chin. Phys. Lett., 1997, 14(11): 876-878.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I11/876
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