Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique
Raid A. Ismail1, Ibrahim Ramadhan1, Aseel Mustafa1
sup>1Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq
2Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq
Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique
Raid A. Ismail1;Ibrahim Ramadhan1;Aseel Mustafa1
sup>1Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq
2Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq
Abstract： Cu2O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500°C for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around (1.1×10-5Ω-1cm-1) at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.
Raid A. Ismail;Ibrahim Ramadhan;Aseel Mustafa. Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique[J]. 中国物理快报, 2005, 22(11): 2977-2979.
Raid A. Ismail, Ibrahim Ramadhan, Aseel Mustafa. Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique. Chin. Phys. Lett., 2005, 22(11): 2977-2979.
2005, Vol. 22 
