Green/Blue Photoluminescence from Nanocrystalline Si Thin Films by Rapid Thermal Processing
ZHU Mei-fang, SUN Jing-lan, LIU Shi-xiang, CHEN Gao, CHEN Pei-yi1 , TANG Yong1
Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100039
1 Institute of Microelectronics, Tsinghua University, Beijing 100084
Green/Blue Photoluminescence from Nanocrystalline Si Thin Films by Rapid Thermal Processing
ZHU Mei-fang;SUN Jing-lan;LIU Shi-xiang;CHEN Gao;CHEN Pei-yi1 ;TANG Yong1
Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100039
1 Institute of Microelectronics, Tsinghua University, Beijing 100084
关键词 ：
78.55.-m ,
81.15.Gh
Abstract ： The green/blue photoluminescence with peaks centered around 2.4 eV at room temperature was observed from nanocrystalline Si thin films prepared by the three-step rapid thermal annealing of hydrogenated amorphous silicon films. The effect of the parameters of rapid thermal annealing on the light emission was studied. A comparison of photoluminescence feature between the films from the rapid thermal annealing and the furnace annealing of a-Si:H has been carried out.
Key words ：
78.55.-m
81.15.Gh
出版日期: 1996-02-01
:
78.55.-m
(Photoluminescence, properties and materials)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
ZHU Mei-fang;SUN Jing-lan;LIU Shi-xiang;CHEN Gao;CHEN Pei-yi;TANG Yong. Green/Blue Photoluminescence from Nanocrystalline Si Thin Films by Rapid Thermal Processing[J]. 中国物理快报, 1996, 13(2): 145-148.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I2/145
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