Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells
LI Wei-liang, QIU Zhi-ren, PENG Wen-ji, HUANG Xu-guang, ZHOU Jian-ying, YU Zhen-xin
State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275
Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells
LI Wei-liang;QIU Zhi-ren;PENG Wen-ji;HUANG Xu-guang;ZHOU Jian-ying;YU Zhen-xin
State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275
关键词 ：
78.47.+p ,
78.66.-w
Abstract ： We present room temperature femtosecond reflection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells (MQW). A rising wing with a time constant of about 5ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5 x 1011 cm-2 . This phenomenon is explained as the saturation of the excitonic transitions.
Key words ：
78.47.+p
78.66.-w
出版日期: 1996-03-01
引用本文:
LI Wei-liang;QIU Zhi-ren;PENG Wen-ji;HUANG Xu-guang;ZHOU Jian-ying;YU Zhen-xin. Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells[J]. 中国物理快报, 1996, 13(3): 237-240.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I3/237
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