Precipitation of Cu and Ni on Frank-Type Partial Dislocations in Czochralski-Grown Silicon
SHEN Bo, ZHANG Rong, SHI Yi, ZHENG You-dou, T. Sekiguchi*, K. Sumino*
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008
*Institute for Materials Research, Tohoku University, Sendai 980, Japan
Precipitation of Cu and Ni on Frank-Type Partial Dislocations in Czochralski-Grown Silicon
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008
*Institute for Materials Research, Tohoku University, Sendai 980, Japan
Abstract： Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated. It is found that Cu develops precipitate colonies in the region away from Frank partials and does not decorate Frank partials when the specimens are cooled slowly, while Ni decorates them although the concentration of Ni is lower than that of Cu in the specimens. The results indicate that Ni impurity is easier to decorate Frank partials than Cu impurity in Si.
(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
引用本文:
SHEN Bo;ZHANG Rong;SHI Yi;ZHENG You-dou;T. Sekiguchi*;K. Sumino*. Precipitation of Cu and Ni on Frank-Type Partial Dislocations in Czochralski-Grown Silicon[J]. 中国物理快报, 1996, 13(4): 289-292.
SHEN Bo, ZHANG Rong, SHI Yi, ZHENG You-dou, T. Sekiguchi*, K. Sumino*. Precipitation of Cu and Ni on Frank-Type Partial Dislocations in Czochralski-Grown Silicon. Chin. Phys. Lett., 1996, 13(4): 289-292.
1996, Vol. 13 
