Thermal Annealing of Si+ Implanted Chemical Vapor Deposition SiO2
ZHENG Xiang-qin, LIAO Liang-sheng, YAN Feng, BAO Xi-mao, WANG Wei* ,
Department of Physics, Nanjing University, Nanjing 210093
* Department of Physics, State University of New York at Albany, Albany NY 12222, USA
Thermal Annealing of Si+ Implanted Chemical Vapor Deposition SiO2
ZHENG Xiang-qin;LIAO Liang-sheng;YAN Feng;BAO Xi-mao;WANG Wei* ,
Department of Physics, Nanjing University, Nanjing 210093
* Department of Physics, State University of New York at Albany, Albany NY 12222, USA
关键词 ：
81.40.Ef ,
78.55.Hx ,
68.55.Ln
Abstract ： Ion implantation was used to bring silicon atoms into chemical vapor deposition SiO2 . Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples. Thermal annealing behavior of the photoluminescence was studied The possible origin of the photoluminescence is discussed.
Key words ：
81.40.Ef
78.55.Hx
68.55.Ln
出版日期: 1996-05-01
:
81.40.Ef
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
78.55.Hx
(Other solid inorganic materials)
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
引用本文:
ZHENG Xiang-qin;LIAO Liang-sheng;YAN Feng;BAO Xi-mao;WANG Wei*;. Thermal Annealing of Si+ Implanted Chemical Vapor Deposition SiO2 [J]. 中国物理快报, 1996, 13(5): 397-400.
+ Implanted Chemical Vapor Deposition SiO2 . Chin. Phys. Lett., 1996, 13(5): 397-400.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I5/397
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