Preparation and Microstructure of Nanosized GaN Crystals
YU San, LI Hong-dong, YANG Hai-bin, LI Dong-mei, SUN Hai-ping, ZOU Guang-tian
National Laboratory of Superhard Materials, Jilin University, Changchun 130023
Preparation and Microstructure of Nanosized GaN Crystals
YU San;LI Hong-dong;YANG Hai-bin;LI Dong-mei;SUN Hai-ping;ZOU Guang-tian
National Laboratory of Superhard Materials, Jilin University, Changchun 130023
关键词 :
42.70.Nq ,
81.20.Ev ,
61.16.Bg
Abstract : Gallium nitride crystals in nano-scale have been fabricated by dc arc plasma method using gallium and N2 +NH3 as starting materials. Transmission electron microscope, selected area diffraction and x-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants a0 = 3.18 Å and c0 = 5.18 Å.
Key words :
42.70.Nq
81.20.Ev
61.16.Bg
出版日期: 1996-06-01
:
42.70.Nq
(Other nonlinear optical materials; photorefractive and semiconductor materials)
81.20.Ev
(Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)
61.16.Bg
引用本文:
YU San;LI Hong-dong;YANG Hai-bin;LI Dong-mei;SUN Hai-ping;ZOU Guang-tian
. Preparation and Microstructure of Nanosized GaN Crystals[J]. 中国物理快报, 1996, 13(6): 444-446.
YU San, LI Hong-dong, YANG Hai-bin, LI Dong-mei, SUN Hai-ping, ZOU Guang-tian
. Preparation and Microstructure of Nanosized GaN Crystals. Chin. Phys. Lett., 1996, 13(6): 444-446.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I6/444
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