Electroluminescence of Boron Doped Diamond Thin Films
ZHANG Bing-lin, WANG Xiao-ping1, HE Jin-tian, Liu Da-jun, WANG Jian-en, Howard R. Shanks2
1Department of Physics, and Henan Fundamental and Applied Science Research Institute, Zhengzhou University, Zhengzhou 450052
Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052
2Microelectronics Research Center, Iowa State University, Ames, IA 50010, USA
Electroluminescence of Boron Doped Diamond Thin Films
ZHANG Bing-lin;WANG Xiao-ping1;HE Jin-tian;Liu Da-jun;WANG Jian-en;Howard R. Shanks2
1Department of Physics, and Henan Fundamental and Applied Science Research Institute, Zhengzhou University, Zhengzhou 450052
Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052
2Microelectronics Research Center, Iowa State University, Ames, IA 50010, USA
Abstract： Blue electroluminescence of boron doped diamond thin film is reported. The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate. The electroluminescence device was driven by a frequency-modulated power supply. The optimum frequency is near 3 kHz. The dependence of electroluminescence intensity on boron impurity has been investigated. The intensity increases with increasing boron impurity. This is expected result according to “Band A ”electroluminescence mechanism of donor-accepter pairs recombination.
ZHANG Bing-lin;WANG Xiao-ping;HE Jin-tian;Liu Da-jun;WANG Jian-en;Howard R. Shanks. Electroluminescence of Boron Doped Diamond Thin Films[J]. 中国物理快报, 1996, 13(6): 455-457.
ZHANG Bing-lin, WANG Xiao-ping, HE Jin-tian, Liu Da-jun, WANG Jian-en, Howard R. Shanks. Electroluminescence of Boron Doped Diamond Thin Films. Chin. Phys. Lett., 1996, 13(6): 455-457.
1996, Vol. 13 
