Abstract： A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.
WANG Zhan-guo;LIN Lan-ying;LI Cheng-ji;ZHONG Xing-ru;
LI Yun-yan;WAN Shou-ke;SUN Hong
. Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions[J]. 中国物理快报, 1996, 13(7): 553-556.
WANG Zhan-guo, LIN Lan-ying, LI Cheng-ji, ZHONG Xing-ru,
LI Yun-yan, WAN Shou-ke, SUN Hong
. Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions. Chin. Phys. Lett., 1996, 13(7): 553-556.
1996, Vol. 13 
