Growth and Luminescence of SiGe Self-organized Dots
CHEN Hong, XIE Xiao-gang, CHENG Wen-qin, HUANG Qi, ZHOU Jun-ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Growth and Luminescence of SiGe Self-organized Dots
CHEN Hong;XIE Xiao-gang;CHENG Wen-qin;HUANG Qi;ZHOU Jun-ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
68.55.-a ,
81.15.-z
Abstract ： It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the silicon layer during the growth of strained SiGe/Si rnultilayers on a Si (001) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than the indirect band-gap of Si, and the luminescence of the quantum dots exceeds that of quantum well by three orders of magnitude. This can be attributed to an indirect-to-direct band-gap conversion in the SiGe dots.
Key words ：
68.55.-a
81.15.-z
出版日期: 1996-08-01
:
68.55.-a
(Thin film structure and morphology)
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
引用本文:
CHEN Hong;XIE Xiao-gang;CHENG Wen-qin;HUANG Qi;ZHOU Jun-ming. Growth and Luminescence of SiGe Self-organized Dots[J]. 中国物理快报, 1996, 13(8): 613-616.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I8/613
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1996, Vol. 13 
