Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure
GU Bing-lin, DUAN Wen-hui, XIONG Shi-ying
Department of Physics, Tsinghua University, Beijing 100084
Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure
GU Bing-lin;DUAN Wen-hui;XIONG Shi-ying
Department of Physics, Tsinghua University, Beijing 100084
关键词 ：
63.20.-e ,
73.40.Kp
Abstract ： The dependence of optical interface phonon on structure was demonstrated for thin layer inserted GaAlAs quantum well structures. It was found that the dispersion is sensitive to the Al-content of the inserted layer but almost independent of the position of the layer. The results showed that phonon modes can be modulated by adjusting the well parameters, which is useful for some device applications.
Key words ：
63.20.-e
73.40.Kp
出版日期: 1996-10-01
:
63.20.-e
(Phonons in crystal lattices)
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
GU Bing-lin;DUAN Wen-hui;XIONG Shi-ying. Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure[J]. 中国物理快报, 1996, 13(10): 768-771.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I10/768
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1996, Vol. 13 
