Abstract： We prepare 2×(NiFe/CoZnO)/ZnO/(CoZnO/Co)×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2×(NiFe/CoZnO) and the fixed magnetic layer (CoZnO/Co)×2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.
(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
引用本文:
JI Gang;YAN Shi-Shen;CHEN Yan-Xue;LIU Guo-Lei;CAO Qiang;MEI Liang-Mo. Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance[J]. 中国物理快报, 2006, 23(2): 446-449.
JI Gang, YAN Shi-Shen, CHEN Yan-Xue, LIU Guo-Lei, CAO Qiang, MEI Liang-Mo. Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance. Chin. Phys. Lett., 2006, 23(2): 446-449.
2006, Vol. 23 
